AO9828 - DEFINITION OF RADIATION EFFECTS MITIGATION TECHNIQUES FOR ULTRA-DEEP SUBMICRON TECHNOLOGIES

Open Date: 18/04/2019
Closing Date: 13/06/2019 13:00:00

Reference Nr.: 19.1ED.05
Prog. Ref.: Technology Developme
Budget Ref.: E/0901-01 - Technology Developme
Special Prov.: BE+DK+FR+DE+IT+NL+ES+SE+CH+GB+IE+AT+NO+FI+PT+GR+LU+CZ+RO+PL+EE+HU
Tender Type: C
Price Range: > 500 KEURO
Products: Satellites & Probes / Electronics / EEE Components / Monolithic Microcircuits (including MMICs)
Techology Domains: Onboard Data Systems / Microelectronics for Digital and Analogue Applications / Methodologies Spacecraft Environments and Effects / Environment Effects / Effects Analysis Tools EEE Components and Quality / Methods and Processes for Product Assurance of EEE Components, including Radiation Hardness Assurance / Radiation Hardening EEE Components and Quality / EEE Component Technologies / Silicon-Based Components
Establishment: ESTEC
Directorate: Directorate of Tech, Eng. & Quality
Department: Electrical Department
Division: Data Syst & Microelectronics Division
Contract Officer: Casini, Gian Lorenzo
Industrial Policy Measure: C2 - Activities in open competition, significant partecipat...

There is a growing request coming from next generation telecom payloads for a major increase of on-board payload flexibility, processing capabilities and large data volumes. Ultra Deep Submicron technology (UDSM) is a key to achieve those needs at affordable cost, while ensuring compatibility with satellite platform mass/power constraints. In this context, Ultra Thin Body and BOX Fully-depleted Silicon-On-Insulator (UTBB-FD-SOI) technology appears as a particularly suitable solution demonstrating excellent Performance/Power/Area trade-off. For space environment, SOI technology has already demonstrated its ability to mitigate Single-Event Effects (SEE). The additional back-gate terminal under the Buried-Oxide of UTBB-FD-SOI also opens new design opportunities to mitigate radiation effects. Finfets technology is another attractive solution for Ultra Deep Submicron downscaling. However, suitability of finfets forspace still needs to be assessed.The proposed activity aims at making a preliminary assessment of advanced UDSM technologies such as 22nm node or below. The scope of the activity shall address the points below:Irradiation characterization of the chosen UDSM technology. Evaluation SEU and SET effects Study and evaluation of design mitigation techniques against SEU/SET for basic blocks: Memories (SRAM), Flip-Flops, buffers etc Evaluation of TID effects Study and evaluation of TID mitigation techniques (e.g. Back-biasing) Evaluation of TCAD simulation methodologies to assess SEE effectsProcurement Policy: C(2) = A relevant participation (in terms of quality and quantity) of non-primes (incl. SMEs) is required. For additional information please go to EMITS news "Industrial Policy measures for non-primes, SMEs and RD entities in ESA programmes".

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